Nexperia

PSMN1R2-80ASE

N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

80

V

VDGR

drain-gate voltage

25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ

-

80

V

VGS

gate-source voltage

-20

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

935

W

VGS = 10 V; Tmb = 25 °C; Fig. 2

-

375

A

ID

drain current

VGS = 10 V; Tmb = 100 °C; Fig. 2

-

375

A

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

-

2347

A

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Tsld(M)

peak soldering

temperature

-

260

°C

Source-drain diode

IS

source current

Tmb = 25 °C

-

375

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

2347

A

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche energy

ID = 109 A; Vsup ≤ 80 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

tp = 230 µs; Fig. 4

[1]

-

1300

mJ

IAS

non-repetitive avalanche

current

Vsup = 80 V; VGS = 10 V; Tj(init) = 25 °C;

RGS = 50 Ω; Fig. 4

[1]

-

109

A

[1] Protected by 100% test

Tmb (°C)

0

200

150

50

100

03aa16

40

80

120

Pder

(%)

0

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

aaa-040962

0

25

50

75

100 125 150 175 200

0

100

200

300

400

500

600

Tmb (°C)

ID

ID

(A)

(A)

(1)

(1)

VGS ≥ 10 V

(1) 375 A continuous current has been successfully

demonstrated during application tests. Practically

the current will be limited by PCB, thermal design

and operating temperature.

Fig. 2. Continuous drain current as a function of

mounting base temperature

PSMN1R2-80ASE

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Product data sheet

29 October 2024

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