PIIPM50E06D004 datasheet(6/28 Pages) IRF

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PIIPM50P12B004

I27146 01/03

Electrical Characteristics: Inverter

For proper operation the device should be used within the recommended conditions.

TJ = 25°C (unless otherwise specified)

Symbol

Parameter Definition

Min.

Typ.

Max.

Units

Test Conditions

Fig.

V(BR)CES

Collector To Emitter Breakdown Voltage

1200

VGE = 0V, IC = 250

µA

∆V(BR)CES / ∆T

Temperature Coeff. of Breakdown Voltage

+1.2

V/ºC

VGE = 0V, IC = 1mA (25 - 125 ºC)

2.15

2.50

IC = 50A, VGE = 15V

5, 6

2.70

3.78

IC = 100A, VGE = 15V

7, 9

VCE(on)

Collector To Emitter Saturation Voltage

2.45

3.22

IC = 50A, VGE = 15V, TJ = 125 ºC

10, 11

VGE(th)

Gate Threshold Voltage

4.4

4.7

5.5

VCE = VGE, IC = 250

µA

∆VGE(th) / ∆Tj

Temp. Coeff. of Threshold Voltage

-1.2

mV/ºC

VCE = VGE, IC = 1mA (25 - 125 ºC)

gfe

Forward Trasconductance

VCE = 50V, IC = 50A, PW = 80

µs

500

VGE = 0V, VCE = 1200V

650

1350

VGE = 0V, VCE = 1200V, TJ = 125 ºC

ICES

Zero Gate Voltage Collector Current

4000

µA

VGE = 0V, VCE = 1200V, TJ = 150 ºC

1.78

2.1

IC = 50A

VFM

Diode Forward Voltage Drop

1.90

2.22

IC = 50A, TJ = 125 ºC

IRM

Diode Reverse Leakage Current

µA

VR = 1200V, TJ = 25 ºC

IGES

Gate To Emitter Leakage Current

±200

VGE = 20V

R1/2/3

Sensing Resistors

1.98

2.02

Rsh

DC bus minus series shunt resistor

1.98

2.02

Ω

PIIPM50E06D004 Datasheet(PDF) 6 Page - International Rectifier

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