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PIIPM50E06D004 Datasheet(PDF) 7 Page - International Rectifier

Part # PIIPM50E06D004
Description  Programmable Isolated IPM
PDF  28 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

PIIPM50E06D004 Datasheet(HTML) 7 Page - International Rectifier

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PIIPM50P12B004
I27146 01/03
Switching Characteristics: Inverter
For proper operation the device should be used within the recommended conditions.
TJ = 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min
Typ
Max
Units
Test Conditions
Fig.
Qg
Total Gate Charge (turn off)
400
411
Qge
Gate – Emitter Charge (turn off)
46
55
Qgc
Gate – Collector Charge (turn off)
181
200
nC
IC = 50A
VCC = 600V
VGE = 15V
23
CT1
Eon
Turn on Switching Loss
2814
3220
IC = 50A, VCC = 600V, TJ = 25 ºC
CT4
Eoff
Turn off Switching Loss
5293
5825
VGE = 15V, RG =10
Ω, L = 250µH
WF1
Etot
Total Switching Loss
8107
9145
µJ
Tail and Diode Rev. Recovery included
WF2
Eon
Turn on Switching Loss
3963
4415
Eoff
Turn off Switching Loss
7810
8965
Etot
Total Switching Loss
11773
13380
µJ
IC = 50A, VCC = 600V, TJ = 125 ºC
VGE = 15V, RG =10
Ω, L = 250µH
Tail and Diode Rev. Recovery included
13,
15
CT4
WF1
WF2
td (on)
Turn on delay time
66
72
14,16
Tr
Rise time
72
83
IC = 50A, VCC = 600V, TJ = 125 ºC
CT4
td (off)
Turn off delay time
593
641
WF1
Tf
Fall time
95
117
ns
VGE = 15V, RG =10
Ω, L = 250µH
WF2
Cies
Input Capacitance
5884
6052
VCC = 30V
Coes
Output Capacitance
950
968
VGE = 0V
Cres
Reverse Transfer Capacitance
167
193
pF
f = 1MHz
22
TJ = 150 ºC, I C =250A, VGE = 15V to 0V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 1000V, Vp = 1200V, RG = 5
Ω
4
CT2
TJ = 150 ºC, VGE = 15V to 0V
CT3
SCSOA
Short Circuit Safe Operating Area
10
µs
VCC = 900V, Vp= 1200V, RG = 5
Ω
WF4
EREC
Diode reverse recovery energy
693
1114
1535
µJ
TJ = 125 ºC
trr
Diode reverse recovery time
156
260
363
ns
IF = 50A, VCC = 600V,
Irr
Peak reverse recovery current
35
42
43
A
VGE = 15V, RG =10
Ω, L = 250µH
17,18
19,20
21
CT4
WF3
RthJC_T
Each IGBT to copper plate thermal resistance
0.38
ºC/W
RthJC_D
Each Diode to copper plate thermal resistance
0.76
ºC/W
RthC-H
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
0.03
ºC/W
24
100
IC = 7A, VDC = 530V, fsw = 8kHz, TC = 55 ºC
150
IC = 10A, VDC = 530V, fsw = 8kHz, TC = 55 ºC
250
IC = 10A, VDC = 530V, fsw = 16kHz TC = 55 ºC,
Pdiss
Total Dissipated Power
200
W
IC = 20A, VDC = 530V, fsw = 4kHz, TC = 40ºC
PD1
PD2
PD3



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