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AS7C31026C Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation |
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AS7C31026C Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation |
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6 / 10 page ![]() AS7C31026C 9/20/06, v 1.0 Alliance Memory P. 6 of 10 ® Write waveform 2 (CE controlled)10,11 AC test conditions Notes 1 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. 2 This parameter is sampled, but not 100% tested. 3 For test conditions, see AC Test Conditions, Figures A and B. 4 These parameters are specified with CL = 5 pF, as in Figures B. Transition is measured ± 200 mV from steady-state voltage. 5 This parameter is guaranteed, but not tested. 6WE is high for read cycle. 7CE and OE are low for read cycle. 8 Address is valid prior to or coincident with CE transition low. 9 All read cycle timings are referenced from the last valid address to the first transitioning address. 10 N/A 11 All write cycle timings are referenced from the last valid address to the first transitioning address. 12 Not applicable. 13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF. Address CE LB, UB WE DataIN tWC tCW tBW tWP tDW tDH tOW tWZ tWR DataOUT Data undefined high Z high Z tAS tAW Data valid tCLZ tAH 255 Ω C13 320 Ω GND +3.3 V Figure B: 3.3 V Output load 168 Ω Thevenin Equivalent: DOUT +1.728 V 10% 90% 10% 90% GND +3.0 V Figure A: Input pulse 3 ns DOUT – Output load: see Figure B. – Input pulse level: GND to 3.0 V. See Figure A. – Input rise and fall times: 3 ns. See Figure A. – Input and output timing reference levels: 1.5 |
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