STM32G473MB datasheet(163/229 Pages) STMICROELECTRONICS

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DS12712 Rev 5

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STM32G473xB STM32G473xC STM32G473xE

Electrical characteristics

194

5.3.23

Temperature sensor characteristics

5.3.24

VBAT monitoring characteristics

Table 76. TS characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

1. Guaranteed by design - Not tested in production.

VTS linearity with temperature

±1

±2

°C

Avg_Slope(1)

Average slope

2.3

2.5

2.7

mV/°C

V30

Voltage at 30°C (±5 °C)(2)

2. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer

to Table 5: Temperature sensor calibration values.

0.742

0.76

0.785

tSTART-RUN(1)

Start-up time in Run mode (start-up of buffer)

µs

tSTART_CONT(3)

Continuous mode means RUN mode or Temperature Sensor ON.

Start-up time when entering in continuous

mode

120

µs

tS_temp(1)

ADC sampling time when reading the

temperature

µs

IDD(TS)(1)

Temperature sensor consumption from VDD,

when selected by ADC

-4.7

µA

Table 77. VBAT monitoring characteristics(1)

1. 1.55 V < VBAT < 3.6 V.

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

3x39

kΩ

QRatio on VBAT measurement

Er(2)

2. Guaranteed by design - Not tested in production.

Error on Q

-10

tS_vbat(2)

ADC sampling time when reading the

VBAT

µs

Table 78. VBAT charging characteristics

Symbol

Parameter Conditions

Min

Typ

Max

Unit

RBC

Battery

charging

resistor

VBRS = 0

kΩ

VBRS = 1

1.5

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