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GD275MJS120L6S Datasheet(PDF) 4 Page - StarPower Europe AG |
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GD275MJS120L6S Datasheet(HTML) 4 Page - StarPower Europe AG |
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4 / 15 page ![]() GD275MJS120L6S IGBT Module ©2024 STARPOWER Semiconductor Ltd. 10/10/2024 4/15 Preliminary T2/T3 IGBT Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=225A,VGE=15V, Tj=25 oC 2.45 V IC=225A,VGE=15V, Tj=125 oC IC=225A,VGE=15V, Tj=150 oC VGE(th) Gate-Emitter Threshold Voltage IC=9.00mA,VCE=VGE, Tj=25 oC 5.6 6.8 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance Ω Cies Input Capacitance VCE=25V,f=100kHz, VGE=0V nF Cres Reverse Transfer Capacitance nF QG Gate Charge VGE=-15…+15V μC td(on) Turn-On Delay Time VCC=600V,IC=225A, RG=2Ω,VGE=-8/+15V, LS=36nH ,Tj=25 oC 153 ns tr Rise Time 46 ns td(off) Turn-Off Delay Time 280 ns tf Fall Time 145 ns Eon Turn-On Switching Loss 13.5 mJ Eoff Turn-Off Switching Loss 6.35 mJ td(on) Turn-On Delay Time VCC=600V,IC=225A, RG=2Ω,VGE=-8/+15V, LS=36nH ,Tj=125 oC 157 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 349 ns tf Fall Time 123 ns Eon Turn-On Switching Loss 16.9 mJ Eoff Turn-Off Switching Loss 8.85 mJ td(on) Turn-On Delay Time VCC=600V,IC=225A, RG=2Ω,VGE=-8/+15V, LS=36nH ,Tj=150 oC 159 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 363 ns tf Fall Time 196 ns Eon Turn-On Switching Loss 18.1 mJ Eoff Turn-Off Switching Loss 9.52 mJ |
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