GD275MJS120L6S datasheet(1/15 Pages) STARPOWER | 1200V/275A 3-level in one-package

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GD275MJS120L6S Datasheet(PDF) 1 Page - StarPower Europe AG

Part #	GD275MJS120L6S

Description	1200V/275A 3-level in one-package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STARPOWER [StarPower Europe AG]

Direct Link	www.starpowereurope.com

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GD275MJS120L6S Datasheet(HTML) 1 Page - StarPower Europe AG

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GD275MJS120L6S

IGBT Module

©2024 STARPOWER Semiconductor Ltd.

10/10/2024

1/15

Preliminary

STARPOWER

SEMICONDUCTOR

IGBT

GD275MJS120L6S

1200V/275A 3-level in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss.They are designed for the

applications such as 3-level-application.

Features



Low VCE(sat) Trench IGBT technology



VCE(sat) with positive temperature coefficient



Maximum junction temperature 175

oC



Fast & soft reverse recovery anti-parallel FWD



Isolated copper baseplate using Si3N4 AMB technology

Typical Applications



Solar power



3-level-application

Equivalent Circuit Schematic

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