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GD660HTX75P6SB Datasheet(PDF) 2 Page - StarPower Europe AG

Part # GD660HTX75P6SB
Description  750V/660A 6 in one-package
PDF  10 Pages
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Manufacturer  STARPOWER [StarPower Europe AG]
Direct Link  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD660HTX75P6SB Datasheet(HTML) 2 Page - StarPower Europe AG

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GD660HTX75P6SB
IGBT Module
©2019 STARPOWER Semiconductor Ltd.
11/9/2019
2/10
Preliminary
Absolute Maximum Ratings T
C=25
oC unless otherwise noted
IGBT
Symbol
Description
Values
Unit
VCES
Collector-Emitter Voltage
750
V
VGES
Gate-Emitter Voltage
±20
V
ICN
Implemented Collector Current
660
A
IC
Collector Current @ TC=90
oC
450
A
ICM
Pulsed Collector Current tp=1ms
1320
A
PD
Maximum Power Dissipation
@ TC=75
oC T
j=175
oC
1162
W
Diode
Symbol
Description
Values
Unit
VRRM
Repetitive Peak Reverse Voltage
750
V
IFN
Implemented Collector Current
660
A
IF
Diode Continuous Forward Current
450
A
IFM
Diode Maximum Forward Current tp=1ms
1320
A
IFSM
Surge Forward Current tp=10ms @ Tj=150
oC
@ Tj=175
oC
2100
1750
A
I
2t
I
2t-value,t
p=10ms @ Tj=150
oC
@ Tj=175
oC
22050
15313
A
2s
Module
Symbol
Description
Value
Unit
Tjmax
Maximum Junction Temperature
175
oC
Tjop
Operating Junction Temperature continuous
For 10s within a period of 30s,occurrence
maximum 3000 times over lifetime
-40 to +150
+150 to +175
oC
TSTG
Storage Temperature Range
-40 to +125
oC
VISO
Isolation Voltage RMS,f=50Hz,t=5s
4000
V



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