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GD660HTX75P6SB Datasheet(PDF) 3 Page - StarPower Europe AG

Part # GD660HTX75P6SB
Description  750V/660A 6 in one-package
PDF  10 Pages
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Manufacturer  STARPOWER [StarPower Europe AG]
Direct Link  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD660HTX75P6SB Datasheet(HTML) 3 Page - StarPower Europe AG

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GD660HTX75P6SB
IGBT Module
©2019 STARPOWER Semiconductor Ltd.
11/9/2019
3/10
Preliminary
IGBT Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=450A,VGE=15V,
Tj=25
oC
1.25
1.50
V
IC=450A,VGE=15V,
Tj=150
oC
1.35
IC=450A,VGE=15V,
Tj=175
oC
1.40
VGE(th)
Gate-Emitter Threshold
Voltage
IC=9.60mA,VCE=VGE,
Tj=25
oC
5.0
5.7
7.0
V
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
1.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
0.7
Ω
Cies
Input Capacitance
VCE=50V,f=100kHz,
VGE=0V
42.1
nF
Coes
Output Capacitance
1.80
nF
Cres
Reverse Transfer
Capacitance
1.18
nF
QG
Gate Charge
VCE =400V,IC =450A,
VGE=-8…+15V
3.01
μC
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.4
Ω,
VGE=-8V/+15V,
Tj=25
oC
202
ns
tr
Rise Time
63
ns
td(off)
Turn-Off Delay Time
601
ns
tf
Fall Time
99
ns
Eon
Turn-On Switching
Loss
13.7
mJ
Eoff
Turn-Off Switching
Loss
25.0
mJ
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.4
Ω,
VGE=-8V/+15V,
Tj=150
oC
206
ns
tr
Rise Time
67
ns
td(off)
Turn-Off Delay Time
671
ns
tf
Fall Time
165
ns
Eon
Turn-On Switching
Loss
20.1
mJ
Eoff
Turn-Off Switching
Loss
30.3
mJ
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.4
Ω,
VGE=-8V/+15V,
Tj=175
oC
206
ns
tr
Rise Time
70
ns
td(off)
Turn-Off Delay Time
686
ns
tf
Fall Time
184
ns
Eon
Turn-On Switching
Loss
22.1
mJ
Eoff
Turn-Off Switching
Loss
31.9
mJ
ISC
SC Data
tP
≤6μs,V
GE=15V,
Tj=25
oC,V
CC=400V,
VCEM
≤750V
5100
A
tP
≤3μs,V
GE=15V,
Tj=175
oC,V
CC=400V,
VCEM
≤750V
3789



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