GD660HTX75P6SB datasheet(4/10 Pages) STARPOWER

4 / 10 page

GD660HTX75P6SB

IGBT Module

11/9/2019

4/10

Preliminary

Diode Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=450A,VGE=0V,Tj=25

1.45

1.70

IF=450A,VGE=0V,Tj=150

1.25

IF=450A,VGE=0V,Tj=175

1.20

Recovered Charge

VR=400V,IF=450A,

-di/dt=6740A/

μs,V

GE=-8V

Tj=25

12.7

μC

IRM

Peak Reverse

Recovery Current

125

Erec

Reverse Recovery

Energy

2.70

Recovered Charge

VR=400V,IF=450A,

-di/dt=5730A/

μs,V

GE=-8V

Tj=150

31.8

μC

IRM

Peak Reverse

Recovery Current

208

Erec

Reverse Recovery

Energy

7.27

Recovered Charge

VR=400V,IF=450A,

-di/dt=5595A/

μs,V

GE=-8V

Tj=175

40.8

μC

IRM

Peak Reverse

Recovery Current

226

Erec

Reverse Recovery

Energy

8.78

NTC Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100

oC,R

100

=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

Module Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.75

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.086

0.147

K/W

Terminal Connection Torque, Screw M4

1.8

2.2

N.m

GD660HTX75P6SB Datasheet(PDF) 4 Page - StarPower Europe AG

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