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UPSD3422 Datasheet(PDF) 209 Page - STMicroelectronics |
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UPSD3422 Datasheet(HTML) 209 Page - STMicroelectronics |
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209 / 293 page ![]() uPSD34xx PSD module 209/293 indicate when an erase or program operation is complete (requires routing the signal on PC board from PC3 back into a pin on the MCU Module). This signal is also available internally on the PSD Module as an input to both PLDs (without routing a signal externally on PC board) and its signal name is “rd_bsy”. The Ready/Busy output can be probed during lab development to check the timing of Flash memory programming in the system at run-time. 28.5.13 Bypassed unlock sequence The Bypass Unlock mode allows the 8032 to program bytes in the Flash memories faster than using the standard Flash program instruction sequences because the typical AAh, 55h unlock bus cycles are bypassed for each byte that is programmed. Bypassing the unlock sequence is typically used when the 8032 is intentionally programming a large number of bytes (such as during IAP). After intentional programming is complete, typically the Bypass mode would be disabled, and full protection is back in place to prevent unwanted WRITEs to Flash memory. The Bypass Unlock mode is entered by first initiating two Unlock bus cycles. This is followed by a third WRITE operation containing the Bypass Unlock command, 20h (as shown in Table 107 on page 203). The Flash memory array that received that sequence then enters the Bypass Unlock mode. After this, a two bus cycle program operation is all that is required to program a byte in this mode. The first bus cycle in this shortened program instruction sequence contains the Bypassed Unlocked Program command, A0h, to any valid address within the unlocked Flash array. The second bus cycle contains the address and data of the byte to be programmed. Programming status is checked using toggle, polling, or Ready/Busy just as before. Additional data bytes are programmed the same way until this Bypass Unlock mode is exited. To exit Bypass Unlock mode, the system must issue the Reset Bypass Unlock instruction sequence. The first bus cycle of this instruction must write 90h to any valid address within the unlocked Flash Array; the second bus cycle must write 00h to any valid address within the unlocked Flash Array. After this sequence the Flash returns to Read Array mode. During Bypass Unlock Mode, only the Bypassed Unlock Program instruction, or the Reset Bypass Unlock instruction is valid, other instruction will be ignored. 28.5.14 Erasing Flash memory Flash memory may be erased sector-by-sector, or an entire Flash memory array may be erased with one command (bulk). 28.5.15 Flash bulk erase The Flash Bulk Erase instruction sequence uses six WRITE operations followed by a READ operation of the status register, as described in Table 107 on page 203. If any byte of the Bulk Erase instruction sequence is wrong, the Bulk Erase instruction sequence aborts and the device is reset to the Read Array mode. The address provided by the 8032 during the Flash Bulk Erase command sequence may select any one of the eight Flash memory sector select signals FSx or one of the four signals CSBOOTx. An erase of the entire Flash memory array will occur in a particular array even though a command was sent to just one of the individual Flash memory sectors within that array. During a Bulk Erase, the memory status may be checked by reading the Error Flag Bit (DQ5), the Toggle Flag Bit (DQ6), and the Data Polling Flag Bit (DQ7). The Error Flag Bit (DQ5) returns a ’1’ if there has been an erase failure. Details of acquiring the status of the |
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