2SC5930

2006-11-13

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

2SC5930

High-Speed and High-Voltage Switching Applications

Switching Regulator Applications

DC-DC Converter Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

600

V

Collector-emitter voltage

600

V

Collector-emitter voltage

285

V

Emitter-base voltage

7

V

DC

1.0

Collector current

Pulse

2.0

A

Base current

0.5

A

Collector power

dissipation

Ta

= 25°C

1.0

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)