2SC5930 datasheet(2/5 Pages) TOSHIBA

Part #	2SC5930

Description	Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC5930

2006-11-13

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 600 V, IE = 0

⎯

100

μA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

⎯

100

μA

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IB = 0

600

⎯

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

285

⎯

hFE (1)

VCE = 5 V, IC = 1 mA

⎯

100

DC current gain

hFE (2)

VCE = 5 V, IC = 0.2 A

⎯

100

Collector-emitter saturation voltage

VCE (sat)

IC = 0.6 A, IB = 0.075 A

⎯

1.0

Base-emitter saturation voltage

VBE (sat)

IC = 0.6 A, IB = 0.075 A

⎯

1.3

Rise time

⎯

0.5

Storage time

tstg

⎯

3.0

Switching time

Fall time

See Figure 1.

VCC ≈ 200 V, RL = 667 Ω

IB1 = 20 mA, −IB2 = 50 mA

⎯

0.3

μs

Marking

Figure 1

Switching Time Test Circuit &

Timing Chart

IB2

IB1

μs

Output

Input

IB2

IB1

VCC

Duty cycle

< 1%

C5930

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

2SC5930 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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