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TA84006F/FG Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TA84006F/FG Datasheet(HTML) 6 Page - Toshiba Semiconductor |
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6 / 22 page ![]() TA84006F/FG 2006-3-6 6 Electrical Characteristics (Ta = 25°C, VCC = 5 V, VM = 20 V) Characteristic Symbol Test Circuit Test Conditions Min Typ. Max Unit VIN (H) 1 IN_UP, IN_VP, IV_WP IN_UN, IN_VN, IN_WN 2.5 ⎯ 5.0 Input voltage VIN (L) 1 ⎯ GND ⎯ 0.8 V IIN1 (H) 2 VIN = 5 V, IN_UP, IN_VP, IN_WP ⎯ ⎯ 20 IIN2 (H) 2 VIN = 5V, IN_UN, IN_VN, IN_WN 300 450 600 IIN1 (L) 2 VIN = GND, IN_UN, IN_VN, IN_WN ⎯ ⎯ 1 Input current IIN2 (L) 2 VIN = GND, IN_UP, IN_VP, IN_WP 300 450 600 µA ICC1 3 Upper phase 1 ON, lower phase 1 ON, output open ⎯ 8.0 13.0 ICC2 3 Upper phase 2 ON, synchronous regeneration mode, output open ⎯ 7.0 12.0 ICC3 3 All phases OFF, output open ⎯ 6.0 11.0 IM1 3 Upper phase 1 ON, lower phase 1 ON, output open ⎯ 2.0 3.5 IM2 3 Upper phase 2 ON, synchronous regeneration mode, output open ⎯ 2.0 3.5 Power supply current IM3 3 All phases OFF, output open ⎯ 1.8 3.2 mA Lower output saturation voltage VSAT 4 IO = 0.5 A ⎯ 1.0 1.5 V Upper output ON-resistance Ron 5 IO = ±0.5 A, bi-directional ⎯ 0.65 1.0 Ω Lower diode forward voltage VF (L) 6 IF = 0.5 A ⎯ 1.2 1.6 V Upper diode forward voltage VF (H) 7 IF = 0.5 A ⎯ 0.9 1.4 V Mid-point voltage VN 8 VM = 20 V VRF = 0 V 9.88 10.4 10.92 V Pin voltage detection level VCMP 9 VM = 20 V VRF = 0 V 9.88 10.4 10.92 V VOL (CMP) 9 IOL = 1 mA GND ⎯ 0.5 V Pin voltage detection output voltage ROH (CMP) 9 ⎯ 7 10 13 k Ω Overcurrent detection level VRF 10 ⎯ 0.45 0.5 0.55 V VOH (ISD) 10 IOH = 0.1 mA 4.5 ⎯ 5.0 V Overcurrent detection output voltage VOL (ISD) 10 IOL = 0.1 mA GND ⎯ 0.5 V Reference voltage VZ 11 IZ = 0.5 mA, Tj = 25°C 20.9 22.0 23.1 V TSD temperature TSD ⎯ Tj ⎯ 165 ⎯ °C TSD hysteresis width ∆T ⎯ ⎯ ⎯ 30 ⎯ °C IL (H) 12 Pch-MOS ⎯ 0 100 Output leakage current IL (L) 13 ⎯ ⎯ 0 50 µA |
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