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LMP91200

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SNAS571E – JANUARY 2012 – REVISED FEBRUARY 2016

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Copyright © 2012–2016, Texas Instruments Incorporated

(1)

Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under

conditions of internal self-heating where TJ >TA.

(2)

Positive current corresponds to current flowing into the device.

(3)

The voltage on any pin should not exceed 6 V relative to any other pins.

(4)

Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the

Statistical Quality Control (SQC) method.

(5)

Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped

production material.

(6)

Boldface limits are production tested at 125°C. Limits are specified through correlations using the Statistical Quality Control (SQC)

method.

(7)

Excluding all currents which flows out from the device.

(8)

Offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature change.

(9)

This parameter is specified by design and/or characterization and is not tested in production.

(10) Offset voltage long term drift is determined by dividing the change in VOS at time extremes of OPL procedure by the length of the OPL

procedure. OPL procedure: 500 hours at 150°C are equivalent to about 15 years.

(11) The short circuit test is a momentary open-loop test.

6.5 Electrical Characteristics

Unless otherwise specified, all limits specified for TA = 25°C. VS = (VDD – GND) = 3.3 V. VREF = 3.3 V.

(1) (2) (3)

PARAMETER

TEST CONDITIONS

MIN(4)

TYP(5)

MAX(4)

UNIT

POWER SUPPLY

Is

Supply Current(6)(7)

pH measurement mode

50

54

µA

at the temperature

extremes

59

pH BUFFER

AolpH

Open-loop Gain

INP = 1.65 V, 300 mV =

VOUT = VDD – 300 mV

120

dB

at the temperature

extremes

90

VospH

Input Voltage Offset(6)

INP = 1/2 VREF

–200

200

µV

at the temperature

extremes

–350

350

TcVospH

Input offset voltage drift(8)(9)

INP = 1/2 VREF

–2.5

2.5

uV/°C

VOSpH_drift

Long-term VOSpH drift

(10)

500 hours OPL

150

µV

IbpH

Input bias current at INP(9)

0 V < INP < 3.3 V

–125

125

fA

0 V < INP < 3.3 V, 85°C

–445

445

fA

0 V < INP < 3.3 V, 125°C

–1.5

1.5

pA

–500 mV < (INP – VCM) < 500 mV, VS = 0 V.

–600

600

fA

–500 mV < (INP – VCM) < 500 mV,

85°C, VS = 0 V.

–6.5

6.5

pA

–500 mV < (INP – VCM) < 500 mV,

125°C, VS = 0 V.

–100

100

pA

GBWPpH

Gain Bandwidth Product(9)

CL = 10 pF, RL = 1 MΩ

220

KHz

CMRRpH

DC_Common-mode rejection

ratio

INP = 1/2 VREF

80

dB

PSRRpH

DC_Power supply rejection

ratio

1.8 V < VDD < 5 V

INP = 1/2 VREF

80

dB

En_RMSpH

Input referred noise (low

frequency)(9)

Integrated 0.1 Hz to 10 Hz

2.6

µVPP

enpH

Input referred noise (high

frequency)(9)

f = 1 kHz

90

nV/

√Hz

IscpH

Output short circuit

current(11)

Sourcing, Vout to GND,

INP = 1.65 V

13

mA

at the temperature

extremes

10

Sinking, Vout to VDD,

INP = 1.65 V

12

mA

at the temperature

extremes

8