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BSM50GD120DLC Datasheet(PDF) 1 Page - eupec GmbH |
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BSM50GD120DLC Datasheet(HTML) 1 Page - eupec GmbH |
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1 / 8 page  Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GD120DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 50 A DC-collector current TC = 25 °C IC 85 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 100 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 350 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES +/- 20V V Dauergleichstrom DC forward current IF 50 A Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms IFRM 100 A Grenzlastintegral der Diode I 2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I 2t 430 A 2s Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung IC = 50A, VGE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V collector-emitter saturation voltage IC = 50A, VGE = 15V, Tvj = 125°C - 2,4 2,9 V Gate-Schwellenspannung gate threshold voltage IC = 2mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V Gateladung gate charge VGE = -15V...+15V QG - 0,53 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 3,3 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 0,21 - nF Kollektor-Emitter Reststrom VCE = 1200V, VGE = 0V, Tvj = 25°C ICES -2 84 µA collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C - 200 - µA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: Mark Münzer date of publication: 09.09.1999 approved by: M. Hierholzer revision: 2 1(8) Seriendatenblatt_BSM50GD120DLC.xls |
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