LM3495

SNVS410F – FEBRUARY 2006 – REVISED APRIL 2013

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Electrical Characteristics

Specifications with standard type are for TJ = 25°C only; limits in boldface type apply over the full Operating Junction

Temperature (TJ) range. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical

values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless

otherwise indicated, VIN = 12V.

Symbol

Parameter

Conditions

Min

Typ(1)

Max

Units

SYSTEM PARAMETERS

-20°C to 85°C

0.594

0.6

0.606

VFB

FB Pin Voltage

V

-40°C to 125°C

0.591

0.6

0.609

Line Regulation

2.9V < VIN < 18V, COMP/SD = 1.5V

0.1

%

ΔVFB/VFB

Load Regulation

1.1V < COMP/SD <1.8V

0.1

%

VIN Rising

2.55

2.6

2.7

VON

UVLO Thresholds

V

VIN Falling

2.26

2.3

2.45

Operating VIN Current

COMP/SD > 0.3V, Not switching

1.8

mA

IQ

Quiescent Current

COMP/SD < 0.3V, Shutdown, VIN = 18V

33

µA

IILIM

ILIM Pin Source Current

18

20

22

µA

VILIM-MAX

Maximum Current Limit Sense Voltage

200

mV

ISD

COMP/SD Pin Pull-up current

COMP/SD = 0V

2

2.6

µA

VHICCUP

COMP/SD Pin Hiccup Threshold

2

V

tDELAY

Hiccup Delay

16

Cycles

tCOOL

Cool Down Time Until Restart

4096

Cycles

tSS

Internal Soft start Time

400

Cycles

VOVP

Over Voltage Protection Threshold

As a % of nominal output voltage

116

125

132

%

IFPWM

FPWM Pin Pull-up Current

FPWM = 0V

4.5

µA

VFPWM-LO

FPWM Operation Threshold

FPWM Voltage Falling

0.9

V

RSNS

SNS Pin Input Resistance

SNS = 1.5V, COMP/SD > 0.3V

30

k

Ω

RDIS

SNS Pin Discharge FET RDSON

SNS = 1.5V, COMP/SD = 0V

350

440

530

Ω

GATE DRIVE

IBOOST

BOOST Pin Leakage Current

BOOST - SW = 5.5V

25

nA

High-Side FET Driver Pull-up ON

RDS1

BOOST - SW = 4.5V

4.5

Ω

resistance

High-Side FET Driver Pull-down ON

RDS2

BOOST - SW = 4.5V

0.9

Ω

resistance

Low-Side FET Driver Pull-up ON

RDS3

VLIN5 = 5.5V

1.4

Ω

resistance

Low-Side FET Driver Pull-down ON

RDS4

VLIN5 = 5.5V

0.7

Ω

resistance

OSCILLATOR

RADJ = 150 kΩ

200

fSW

PWM Frequency

RADJ = 54.9 kΩ

450

500

550

kHz

RADJ = 17.8 kΩ

1500

VSYNC-HI

Threshold for SYNC on FREQ Pin

SYNC Voltage Rising

1.2

V

VSYNC-LO

Threshold for SYNC on FREQ Pin

SYNC Voltage Falling

0.3

V

tON-SKIP

On Time During Skip Mode

VO = 1.5V, fSW = 500 kHz

125

ns

tON-MAX

Adaptive Maximum On-time Limit

VO = 1.5V, fSW = 500 kHz

750

ns

tOFF-MIN

Minimum Off-time

300

ns

ERROR AMP

gM

Transconductance

750

µmho

BW-3dB

Open Loop Bandwidth

COMP/SD Floating

5

MHz

IFB

FB Pin Bias Current

VFB = 0.6V

1

nA

(1)

Typical specifications represent the most likely parametric norm at 25°C operation.

4

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