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CSD13385F5.Z Datasheet(PDF) 1 Page - Texas Instruments |
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CSD13385F5.Z Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 16 page ![]() CSD13385F5 12-V N-Channel FemtoFET™ MOSFET 1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load switch applications • Optimized for general purpose switching applications 3 Description This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. 0.77 mm 0.36 mm 1.53 mm Typical Part Dimensions . . . . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 3.9 nC Qgd Gate Charge Gate-to-Drain 0.39 nC RDS(on) Drain-to-Source On Resistance VGS = 1.8 V 26 mΩ VGS = 2.5 V 18 VGS = 4.5 V 15 VGS(th) Threshold Voltage 0.8 V Device Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD13385F5 3000 7-Inch Reel Femto 1.53-mm × 0.77-mm SMD Lead Less Tape and Reel CSD13385F5T 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 12 V VGS Gate-to-Source Voltage 8 V ID Continuous Drain Current(1) 4.3 A Continuous Drain Current(2) 7.1 IDM Pulsed Drain Current(1) (3) 41 A PD Power Dissipation(1) 0.5 W Power Dissipation(2) 1.4 V(ESD) Human-Body Model (HBM) 4 kV Charged-Device Model (CDM) 2 TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Min Cu, typical RθJA = 245°C/W. (2) Max Cu, typical RθJA = 90°C/W. (3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%. D G S Top View CSD13385F5 SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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