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PDEB2310L Datasheet(PDF) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # PDEB2310L
Description  20V N-Channel MOSFETs
PDF  6 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

PDEB2310L Datasheet(HTML) 4 Page - Guangdong Huixin Electronic Technology Co., Ltd.

  PDEB2310L Datasheet HTML 1Page - Guangdong Huixin Electronic Technology Co., Ltd. PDEB2310L Datasheet HTML 2Page - Guangdong Huixin Electronic Technology Co., Ltd. PDEB2310L Datasheet HTML 3Page - Guangdong Huixin Electronic Technology Co., Ltd. PDEB2310L Datasheet HTML 4Page - Guangdong Huixin Electronic Technology Co., Ltd. PDEB2310L Datasheet HTML 5Page - Guangdong Huixin Electronic Technology Co., Ltd. PDEB2310L Datasheet HTML 6Page - Guangdong Huixin Electronic Technology Co., Ltd.  
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Potens semiconductor corp.
Ver.1.08
4
PDEB2310L
V
20V N-Channel MOSFETs
Fig.10 Maximum Safe Operation Area
Fig.11 Switching Time Waveform
Fig.8 Gate Charge Characteristics
Fig.12 Gate Charge Waveform
10
100
1000
0.1
1
10
Ciss
Coss
Crss
0
1
2
3
4
5
0
4
8
12
16
ID=5A
VDS=10V
0.01
0.1
1
10
100
0.1
1
10
TC=25℃
DC
100ms
10ms
100
μs
10
μs
1ms
VGS
10V /
4.5V
Qg
Qgd
Qgs
Gate Charge
Td(on)
Tr
Ton
Td(off)
Tf
Toff
VDS
VGS
90%
10%
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
VDS , Drain to Source Voltage (V)
Qg , Gate Charge (nC)
Fig.9 Normalized Transient Impedance
Square Wave Pulse Duration (s)
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance Characteristics



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