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PDEB2310L Datasheet(PDF) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # PDEB2310L
Description  20V N-Channel MOSFETs
PDF  6 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

PDEB2310L Datasheet(HTML) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Potens semiconductor corp.
Ver.1.08
1
PDEB2310L
V
20V N-Channel MOSFETs
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±10
V
ID
Drain Current
– Continuous (TA=25℃)
9.9
A
Drain Current
– Continuous (TA=70℃)
7.9
A
IDM
Drain Current
– Pulsed1 (Chip Limitation)
39.6
A
PD
Power Dissipation (TA=25℃)
2.01
W
Power Dissipation
– Derate above 25℃
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to ambient
---
62
℃/W
BVDSS
RDSON
ID
20V
13m
9.9A
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
 20V,9.9A, RDS(ON) =13m
Ω @VGS = 4.5V
 Improved dv/dt capability
 ESD Protection Diode Embedded
 Green Device Available
General Description
Features
Applications
 MB / VGA / Vcore
 POL Applications
 SMPS 2nd SR
 Li-Battery Protection
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
DFN2X2-6L Pin Configuration
D
S
G
D
D
D
D
G
S
S
D
S
D
D
D
D
G


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