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PDEB2310L Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # PDEB2310L
Description  20V N-Channel MOSFETs
PDF  6 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

PDEB2310L Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Potens semiconductor corp.
Ver.1.08
2
PDEB2310L
V
20V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250
μA
20
---
---
V
△BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.02
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=20V , VGS=0V , TJ=25℃
---
---
1
μA
VDS=16V , VGS=0V , TJ=125℃
---
---
10
μA
IGSS
Gate-Source Leakage Current
VGS=±10V , VDS=0V
---
---
±10
μA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V , ID=5A
---
10
13
m
VGS=2.5V , ID=3A
---
11.5
15.5
m
VGS=1.8V , ID=2A
---
15
21
m
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250
μA
0.3
0.6
1
V
△VGS(th)
VGS(th) Temperature Coefficient
---
-2
---
mV/℃
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=10V , VGS=4.5V , ID=5A
---
16.9
26
nC
Qgs
Gate-Source Charge2 , 3
---
1.1
3
Qgd
Gate-Drain Charge2 , 3
---
4
7
Td(on)
Turn-On Delay Time2 , 3
VDD=10V , VGS=4.5V , RG=25
ID=1A
---
6.8
13
ns
Tr
Rise Time2 , 3
---
20
38
Td(off)
Turn-Off Delay Time2 , 3
---
41.8
79
Tf
Fall Time2 , 3
---
13.2
25
Ciss
Input Capacitance
VDS=10V , VGS=0V , F=1MHz
---
1020
1480
pF
Coss
Output Capacitance
---
160
240
Crss
Reverse Transfer Capacitance
---
110
160
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2
4
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
9.9
A
ISM
Pulsed Source Current
---
---
19.8
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300
μs , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (T
J=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings



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