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L9904

Drivers for external lowside power MOS

ON-resistance of SINK stage

10

20

Ω

Ω

ON-resistance of SOURCE stage

10

20

Ω

Ω

Gate ON voltage (SOURCE)

7V

10V

10V

14V

Gate discharge resistance

EN = LOW

10

100

k

Ω

2. not tested in production: guaranteed by design and verified in characterization

Timing of the drivers

Propagation delay time

Fig. 2

RPR= 10kW

500

ns

Propagation delay time including

cross conduction protection time

Fig. 2

5)

0.7

1

1.3

µs

Propagation delay time

500

ns

Propagation delay time

Fig. 2

500

ns

Propagation delay time including

cross conduction protection time

Fig. 2

5)

0.7

1

1.3

µs

Propagation delay time

500

ns

Rise time

Fig. 2

1µs

Fall time

1µs

Rise time

1µs

Fall time

1µs

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

ELECTRICAL CHARACTERISTICS (continued)