Datasheet

TP70H300G4LSG

700V SuperGaN® GaN FET in PQFN 8 × 8 Performance Package (source tab)

R07DS1609EU0200 Rev.2.00

Nov 21, 2025

Page 1

© 2025 Renesas Electronics

Description

The TP70H300G4LSG 700V, 240mΩ Gallium Nitride

(GaN) FET is a normally-off device that uses

Renesas’ Gen IV platform. It combines a state-of-the-

art high-voltage GaN HEMT with a low-voltage silicon

MOSFET to offer superior reliability and performance

while enabling reduced system size and cost.

The Gen IV SuperGaN® platform uses advanced epi

and patented design technologies to simplify

manufacturability while improving efficiency over

silicon via lower gate charge, output capacitance,

crossover loss, and reverse recovery charge.

Benefits

■

Achieves increased efficiency in both hard- and

soft-switched circuits

●

Increased power density

●

Reduced system size and weight

●

Overall lower system cost

■

Easy to drive with Si gate drivers

Product and Schematic Diagrams

TP70H300G4LSG PQFN 8 × 8 PP

Cascode Schematic Symbol

Cascode Device Structure

(MOSFET has integrated ESD Protection

Circuit)

Features

■

Gen IV technology

■

JEDEC-qualified GaN technology

■

Dynamic RDS(on)eff production tested

■

Robust design, defined by:

●

Transient over-voltage capability

●

Operation with E-mode gate drivers without

need for Zener protection

■

Reduced crossover loss

■

Negligible Qrr

■

RoHS compliant and Halogen-free packaging

■

2kV HBM ESD rating

Applications

■

Consumer

■

Power adapters

■

Low-power SMPS

■

Lighting

Key Specifications

VDS (V)

700

VDSS(TR)(V)

800

RDS(on) (mΩ) maximum [1]

312

QOSS (nC) typical

17

QG (nC) typical

5.4

1.

Dynamic RDS(on); see Figure 17 and Figure 18.