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PDEB25F4CP Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDEB25F4CP Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 5 page  Potens semiconductor corp. Ver.1.00 1 PDEB25F4CP 20V Dual N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Drain Current – Continuous (TA=25℃) 15 A Drain Current – Continuous (TA=70℃) 12 A Drain Current – Continuous (TC=25℃) 40 A Drain Current – Continuous (TC=100℃) 25.3 A IDM Drain Current – Pulsed1 (TC=25℃) 160 A PD Power Dissipation (TA=25℃) 2 W Power Dissipation – Derate above 25℃ 0.016 W/℃ Power Dissipation (TC=25℃) 15 W Power Dissipation – Derate above 25℃ 0.12 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 8.2 ℃/W BVDSS RDSON ID 20V 5.4m 40A These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 20V,40A, RDS(ON) =5.4m Ω @VGS = 4.5V Improved dv/dt capability Fast switching G-S ESD Protection Diode Embedded Green Device Available General Description Features Applications Handheld Instruments POL Applications Battery Protection Applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN3x3 Dual Pin Configuration D1/D2 G1 S1 S2 G2 S1 S1 S1 G1 S2 S2 S2 G2 D1/D2 |
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