Potens semiconductor corp.

Ver.1.00

2

PDEB25F4CP

20V Dual N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250µA

20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=18V , VGS=0V , TJ=25℃

---

---

1

µA

VDS=16V , VGS=0V , TJ=70℃

---

---

10

µA

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±10

µA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V , ID=3A

3.6

4.5

5.4

m



VGS=4.0V , ID=3A

3.7

4.7

5.8

m



VGS=3.8V , ID=3A

3.8

4.8

6

m



VGS=3.1V , ID=3A

4

5.2

6.6

m



VGS=2.5V , ID=3A

4.3

5.9

7.7

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250µA

0.5

0.75

1.5

V

Dynamic and switching Characteristics2

Qg

Total Gate Charge

VDS=10V , VGS=4.5V , ID=20A

---

19

30

nC

Qgs

Gate-Source Charge

---

1.6

5

Qgd

Gate-Drain Charge

---

4.8

10

Td(on)

Turn-On Delay Time

VDD=10V , VGS=4.5V , RG=6



ID=20A

---

30

50

ns

Tr

Rise Time

---

70

100

Td(off)

Turn-Off Delay Time

---

80

120

Tf

Fall Time

---

105

160

Ciss

Input Capacitance

VDS=10V , VGS=0V , F=1MHz

---

440

660

pF

Coss

Output Capacitance

---

220

350

Crss

Reverse Transfer Capacitance

---

56

90

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

40

A

ISM

Pulsed Source Current

---

---

80

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings