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PDEB25F4CP Datasheet(PDF) 3 Page - Potens Semiconductor Corp. |
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PDEB25F4CP Datasheet(HTML) 3 Page - Potens Semiconductor Corp. |
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3 / 5 page ![]() Potens semiconductor corp. Ver.1.00 3 PDEB25F4CP 20V Dual N-Channel MOSFETs 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 0 8 16 24 32 40 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 0.01 0.1 1 10 100 0.1 1 10 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms 0 1 2 3 4 5 0 4 8 12 16 20 ID=20A VDS=10V Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Fig.4 Gate Charge Waveform Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃) Qg , Gate Charge (nC) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) |
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