1

IPA60R080P7

Rev.2.1,2018-05-15

Final Data Sheet

PG-TO220FP

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

MOSFET

600VCoolMOSªP7PowerTransistor

TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor

highvoltagepowerMOSFETs,designedaccordingtothesuperjunction

(SJ)principleandpioneeredbyInfineonTechnologies.The600V

CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It

combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease

ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody

diodeagainsthardcommutationandexcellentESDcapability.

Furthermore,extremelylowswitchingandconductionlossesmake

switchingapplicationsevenmoreefficient,morecompactandmuch

cooler.

Features

•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding

 commutationruggedness

•Significantreductionofswitchingandconductionlosses

•ExcellentESDrobustness>2kV(HBM)forallproducts

•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya

 lowRDS(on)*A(below1Ohm*mm²)

•Fullyqualifiedacc.JEDECforIndustrialApplications

Benefits

•Easeofuseandfastdesign-inthroughlowringingtendencyandusage

 acrossPFCandPWMstages

•Simplifiedthermalmanagementduetolowswitchingandconduction

 losses

•Increasedpowerdensitysolutionsenabledbyusingproductswith

 smallerfootprintandhighermanufacturingqualitydueto>2kVESD

 protection

•Suitableforawidevarietyofapplicationsandpowerranges

Potentialapplications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages

fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom

andUPS.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS @ Tj,max

650

V

RDS(on),max

80

m

Ω

Qg,typ

51

nC

ID,pulse

110

A

Eoss @ 400V

5.5

µJ

Body diode diF/dt

900

A/µs

Type/OrderingCode

Package

Marking

RelatedLinks

IPA60R080P7

PG-TO 220 FullPAK

60R080P7

see Appendix A