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QST104 Datasheet(PDF) 30 Page - STMicroelectronics |
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QST104 Datasheet(HTML) 30 Page - STMicroelectronics |
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30 / 45 page ![]() Electrical characteristics QST104 30/45 6.1.5 Pin input voltage The input voltage measurement on a pin of the device is described in Figure 7. Figure 7. Pin input voltage 6.2 Absolute maximum ratings Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. VIN Input pin Table 20. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range −65 to +150 °C TJ Maximum junction temperature Table 21. Voltage characteristics Symbol Ratings Maximum value Unit VDD − VSS Supply voltage 7.0 V VIN Input voltage on any pin (1)(2) 1. Directly connecting the RESET and I/O pins to VDD or VSS could damage the device if an unintentional internal reset is generated or an unexpected change of the I/O configuration occurs (for example, due to a corrupted program counter). To guarantee safe operation, this connection has to be done through a pull-up or pull-down resistor (typical: 4.7k Ω for RESET, 10kΩ for I/Os). 2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads, there is no positive injection current, and the corresponding VIN maximum must always be respected. VSS−0.3 to VDD+0.3 VESD(HBM) Electrostatic discharge voltage (Human Body Model) 2000 VESD(CDM) Electrostatic discharge voltage (Charge Device Model) 500 |
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