RA4E1 datasheet(20/81 Pages) RENESAS

20 / 81 page

2.2.4

I/O VOH, VOL, and Other Characteristics

Table 2.6

I/O VOH, VOL, and other characteristics

Parameter

Symbol Min

Typ Max Unit Test conditions

Output voltage

IIC

VOL

—

0.4

IOL = 3.0 mA

VOL

—

0.6

IOL = 6.0 mA

IIC*1

VOL

—

0.4

IOL = 15.0 mA (ICFER.FMPE = 1)

VOL

—

0.4 —

IOL = 20.0 mA (ICFER.FMPE = 1)

Ports P205, P206, P407 to

P411 (total 7 pins)*2

VOH

VCC – 1.0 —

—

IOH = –20 mA

VCC = 3.3 V

VOL

—

1.0

IOL = 20 mA

VCC = 3.3 V

Other output pins

VOH

VCC – 0.5 —

—

IOH = –1.0 mA

VOL

—

0.5

IOL = 1.0 mA

Input leakage current

RES

|Iin|

—

5.0

µA

Vin = 0 V

Vin = 5.5 V

Port P200

—

1.0

Vin = 0 V

Vin = VCC

Three-state leakage current

(off state)

5 V-tolerant ports

|ITSI|

—

5.0

µA

Vin = 0 V

Vin = 5.5 V

Other ports (except for port

P200)

—

1.0

Vin = 0 V

Vin = VCC

Input pull-up MOS current

Ports P0 to P5

–300

—

–10 µA

VCC = 2.7 to 3.6 V

Vin = 0 V

Input capacitance

Ports P014, P015

Cin

—

Vbias = 0 V

Vamp = 20 mV

f = 1 MHz

Ta = 25°C

USB_DP and USB_DM

—

Ports P400, P401

—

Other input pins

—

Note 1. SCL0_A, SDA0_A (total 2 pins).

Note 2. This is the value when high driving ability is selected in the Port Drive Capability bit in the PmnPFS register.

The selected driving ability is retained in Deep Software Standby mode.

RA4E1 Datasheet

2. Electrical Characteristics

R01DS0391EJ0130 Rev.1.30

Jun 6, 2025

Page 20 of 81

RA4E1 Datasheet(PDF) 20 Page - Renesas Technology Corp

RA4E1 Datasheet(HTML) 20 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81

Datasheet Download

Link URL