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R5F5671CDDFM Datasheet(PDF) 163 Page - Renesas Technology Corp |
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R5F5671CDDFM Datasheet(HTML) 163 Page - Renesas Technology Corp |
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163 / 179 page  R01DS0373EJ0120 Rev.1.20 Page 163 of 179 Sep 30, 2024 RX671 Group 2. Electrical Characteristics 2.12 Flash Memory Characteristics Note 1. Definition of program/erase cycle: The program/erase cycle is the number of erasing for each block. When the number of program/erase cycles is n, each block can be erased n times. For instance, when 128-byte program is performed 64 times for different addresses in 8-Kbyte block and then the block is erased, the program/erase cycle is counted as one. However, the same address cannot be programmed more than once before the next erase cycle (overwriting is prohibited). Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to guarantee all characteristics listed in this table. Note 3. This shows the characteristic when the flash memory writer or self-programming library from Renesas Electronics is in use, and the number of times programming and erasure proceed does not exceed the specified value. Note 4. These values are based on the results of reliability testing. Table 2.61 Code Flash Memory Characteristics Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 V ≤ VREFH0 ≤ AVCC0, VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V, Temperature range for programming/erasure: Ta = Topr Item Symbol FCLK = 4 MHz FCLK = 15 MHz 20 MHz ≤ FCLK ≤ 60 MHz Unit Test Conditions Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Programming time NPEC ≤ 100 times 128 bytes tP128 — 0.75 13.2 — 0.38 6.6 — 0.34 6 ms 8 Kbytes tP8K — 49 176 — 25 88 — 22 80 ms 32 Kbytes tP32K — 194 704 — 97 352 — 88 320 ms Programming time NPEC > 100 times 128 bytes tP128 — 0.91 15.8 — 0.46 8 — 0.41 7.2 ms 8 Kbytes tP8K — 60 212 — 30 106 — 27 96 ms 32 Kbytes tP32K — 234 848 — 117 424 — 106 384 ms Erasure time NPEC ≤ 100 times 8 Kbytes tE8K — 78 216 — 48 132 — 43 120 ms 32 Kbytes tE32K — 283 864 — 173 528 — 157 480 ms Erasure time NPEC > 100 times 8 Kbytes tE8K — 94 260 — 58 158 — 52 144 ms 32 Kbytes tE32K — 341 1040 — 208 632 — 189 576 ms Reprogramming/erasure cycle*1 NPEC 10000 *2 — — 10000 *2 — — 10000 *2 —— Times Suspend delay time during programming tSPD — — 264 — — 132 — — 120 µs First suspend delay time during erasing (in suspend priority mode) tSESD1 — — 216 — — 132 — — 120 µs Second suspend delay time during erasure (in suspend priority mode) tSESD2 — — 1.7 — — 1.7 — — 1.7 ms Suspend delay time during erasure (in erasure priority mode) tSEED — — 1.7 — — 1.7 — — 1.7 ms Forced stop command tFD — — 32 — — 22 — — 20 µs Data hold time*3, *4 tDRP 20 — — 20 — — 20 — — Year Ta ≤ 85°C 10 — — 10 — — 10 — — Ta ≤ 105°C |
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