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DS20005006B-page 3

MCP14E6/7/8

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

Supply Voltage ..........................................................................................................................................................+20V

Input Voltage ......................................................................................................................... (VDD + 0.3V) to (GND – 5V)

Enable Voltage...................................................................................................................... (VDD + 0.3V) to (GND – 5V)

Input Current (VIN >VDD)........................................................................................................................................50 mA

Package Power Dissipation (TA =+50oC)

8L-DFN .................................................................................................................................................................. Note 3

8L-PDIP...................................................................................................................................................................1.12W

8L-SOIC ...............................................................................................................................................................669 mW

†Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage

to the device. These are stress ratings only and functional operation of the device at these or any other

conditions above those indicated in the operation sections of the specifications is not implied. Exposure to

Absolute Maximum Rating conditions for extended periods may affect device reliability.

DC CHARACTERISTICS(2)

Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V  VDD  18V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input

Logic ‘1’, High Input Voltage

VIH

2.4

1.5

—

V

Logic ‘0’, Low Input Voltage

VIL

—1.3

0.8

V

Input Current

IIN

-1

—

1

µA

0V

 VIN  VDD

Input Voltage

VIN

-5

—

VDD + 0.3

V

Output

High Output Voltage

VOH

VDD – 0.025

—

—

V

DC Test

Low Output Voltage

VOL

—

—

0.025

V

DC Test

Output Resistance, High

ROH

—5

8

Ω

IOUT =10mA, VDD = 18V

Output Resistance, Low

ROL

—5

8

Ω

IOUT =10mA, VDD = 18V

Peak Output Current

IPK

—2

—

A

VDD  18V(2)

Switching Time(1)

Rise Time

tR

—12

30

ns

Figure 4-1, Figure 4-2,

CL =1000pF

Fall Time

tF

—15

35

ns

Figure 4-1, Figure 4-2,

CL =1000pF

Propagation Delay Time

tD1

—45

55

ns

Figure 4-1, Figure 4-2

Propagation Delay Time

tD2

—45

55

ns

Figure 4-1, Figure 4-2

Enable Function (ENB_A, ENB_B)

High-Level Input Voltage

VEN_H

2.4

1.6

—

V

VDD = 12V, Low-to-High Transition

Low-Level Input Voltage

VEN_L

—1.2

0.8

V

VDD = 12V, High-to-Low Transition

Hysteresis

VHYST

—400

—

mV

Enable Pull-up Impedance

RENBL

0.7

1.6

3.0

MΩ

VDD = 14V, ENBL = GND

Enable Pin Leakage Current

IENBL

—10

—

µA

VDD =12V,

ENB_A = ENB_B = GND

Note 1: Switching times are ensured by design.

2: Tested during characterization, not production tested.

3: Package power dissipation is dependent on the copper pad area of the PCB.