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FRDM-HB2002ESEVM Datasheet(PDF) 6 Page - NXP Semiconductors

Part # FRDM-HB2002ESEVM
Description  evaluation board
PDF  27 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

FRDM-HB2002ESEVM Datasheet(HTML) 6 Page - NXP Semiconductors

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NXP Semiconductors
UM11144
FRDM-HB2002ESEVM evaluation board
UM11144
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2018. All rights reserved.
User guide
Rev. 1.0 — 13 September 2018
6 / 27
servo motor control applications within the specified current (average load is 3.0 A, peak
current is 10 A) and voltage limits.
The MC33HB2002 is similar to the MC33HB2000 device with higher overtemperature
setting and the use of current foldback for current limiting to extend fault operation range.
This part is designed to specifically address the ISO 26262 safety requirements. It meets
the stringent requirements of automotive applications and is fully AEC-Q100 grade 1
qualified.
3.2.1.2 Features
• Advanced diagnostic reporting via a serial peripheral interface (SPI): charge pump
undervoltage, overvoltage, and undervoltage on VPWR, short to ground and short
to VPWR for each output, open load, temperature warning and overtemperature
shutdown
• Thermal management: Excellent thermal resistance of <1.0 °C/W between junction and
case (exposed pad)
• Eight selectable slew rates via the SPI: 0.25 V/μs to more than 16 V/μs for EMI and
thermal performance optimization
• Four selectable current limits via the SPI: 5.4/7.0/8.8/10.7 A covering a wide range of
applications
• Extended high temperature operating range with current foldback while limiting the
current
• Three package sizes available in SOIC, PQFN and HVQFN to meet footprint and
application requirement
• Can be operated without SPI with default slew rate of 2.0 V/μs and a 7.0 A current limit
threshold
• Highly accurate real-time current feedback through a current mirror output signal with
less than 5.0 % error
• Drives inductive loads in a full H-bridge or half-bridge configuration
• Overvoltage protection places the load in high-side recirculation (braking) mode with
notification in H-bridge mode
• Wide operating range: 5.0 V to 28 V operation
• Low RDS(on) integrated MOSFETs: maximum of 235 mΩ (TJ = 150 °C) for each
MOSFET
• Internal protection for overtemperature, undervoltage, and short-circuit by signaling the
error condition and disabling the outputs
• I/O pins can withstand up to 36 V
• AEC-Q100 grade 1 qualified



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