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FRDM-HB2002ESEVM Datasheet(PDF) 6 Page - NXP Semiconductors |
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FRDM-HB2002ESEVM Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 27 page ![]() NXP Semiconductors UM11144 FRDM-HB2002ESEVM evaluation board UM11144 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved. User guide Rev. 1.0 — 13 September 2018 6 / 27 servo motor control applications within the specified current (average load is 3.0 A, peak current is 10 A) and voltage limits. The MC33HB2002 is similar to the MC33HB2000 device with higher overtemperature setting and the use of current foldback for current limiting to extend fault operation range. This part is designed to specifically address the ISO 26262 safety requirements. It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified. 3.2.1.2 Features • Advanced diagnostic reporting via a serial peripheral interface (SPI): charge pump undervoltage, overvoltage, and undervoltage on VPWR, short to ground and short to VPWR for each output, open load, temperature warning and overtemperature shutdown • Thermal management: Excellent thermal resistance of <1.0 °C/W between junction and case (exposed pad) • Eight selectable slew rates via the SPI: 0.25 V/μs to more than 16 V/μs for EMI and thermal performance optimization • Four selectable current limits via the SPI: 5.4/7.0/8.8/10.7 A covering a wide range of applications • Extended high temperature operating range with current foldback while limiting the current • Three package sizes available in SOIC, PQFN and HVQFN to meet footprint and application requirement • Can be operated without SPI with default slew rate of 2.0 V/μs and a 7.0 A current limit threshold • Highly accurate real-time current feedback through a current mirror output signal with less than 5.0 % error • Drives inductive loads in a full H-bridge or half-bridge configuration • Overvoltage protection places the load in high-side recirculation (braking) mode with notification in H-bridge mode • Wide operating range: 5.0 V to 28 V operation • Low RDS(on) integrated MOSFETs: maximum of 235 mΩ (TJ = 150 °C) for each MOSFET • Internal protection for overtemperature, undervoltage, and short-circuit by signaling the error condition and disabling the outputs • I/O pins can withstand up to 36 V • AEC-Q100 grade 1 qualified |
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