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SFS4936 Datasheet(PDF) 2 Page - SemiWell Semiconductor |
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SFS4936 Datasheet(HTML) 2 Page - SemiWell Semiconductor |
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2 / 6 page ![]() SFS4936 Electrical Characteristics ( T J = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 30 - - V Δ BVDSS/ Δ TJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25 °C -29 - mV/°C IDSS Drain-Source Leakage Current VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55 °C -- 1 25 uA IGSS Gate-Source Leakage, Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 - 3.0 V RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 5.8A VGS = 4.5 V, ID = 4.7A - - 0.027 0.037 0.035 0.053 Ω Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =15V, f = 1MHz -600 - pF Coss Output Capacitance - 295 - Crss Reverse Transfer Capacitance - 90 - Dynamic Characteristics td(on) Turn-on Delay Time VDD =15V, ID =1A, RG =50Ω (Note 2,3) -9 28 ns tr Rise Time - 10 30 td(off) Turn-off Delay Time - 85 180 tf Fall Time - 40 90 Qg Total Gate Charge VDS =15V, VGS =10V, ID =5.8A (Note 2,3) -20 26 nC Qgs Gate-Source Charge - 2.3 - Qgd Gate-Drain Charge(Miller Charge) - 5 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Maximum Continuous Diode Forward Current - - 1.7 A VSD Diode Forward Voltage IS =1.7A, VGS =0V (Note 2) -- 1.2 V ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 3. Essentially independent of operating temperature. 4. Surface mounted on 1 inch2 Cu board. 2/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. |
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