EMC646SP16JS-70L datasheet(30/65 Pages) EMLSI

30 / 65 page

EMC646SP16J

4Mx16 CellularRAM

Preliminary

Table 11: Deep Power-Down Specifications

Note: Typical (TYP) IZZ value is tested at Vcc=1.8V, TA=25°C and not guaranteed.

Table 12: Capacitance

Note: These parameters are verified in device characterization and are not 100% tested.

Figure 21: AC Input/Output Reference Waveform

Note:

1. AC test inputs are driven at VccQ for a logic 1 and VssQ for a logic 0. Input rise and fall times (10% to 90%) <1.6ns.

2. Input timing begins at VccQ/2.

3. Output timing ends at VccQ/2.

Figure 22: AC Output Load Circuit

Note: All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b).

Description

Conditions

Symbol

Typ

Max

Unit

Deep Power-Down

VIN = VccQ or 0V;

Vcc, VccQ = 1.95V; +85°C

IZZ

310

µA

Description

Conditions

Symbol

Min

Max

Unit

Note

Input Capacitance

Tc = = +25°C; f = 1 MHz;

VIN = 0V

CIN

2.0

Input/Output

Capacitance(DQ)

CIO

3.5

VccQ

VssQ

Input1

VccQ/22

VccQ/23

Test Points

Output

DUT

Test Points

50-Ohm

30pF

VccQ/2

EMC646SP16JS-70L Datasheet(PDF) 30 Page - Emerging Memory & Logic Solutions Inc

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