STM8AF51XX datasheet(71/100 Pages) STMICROELECTRONICS

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STM8AF61xx, STM8AF51xx

Electrical characteristics

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11.3.4

Memory characteristics

RAM and hardware registers

Flash program memory/data EEPROM memory

General conditions: TA = -40 to 125 °C.

Table 28.

RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode(1)

Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware

registers (only in halt mode). Guaranteed by design, not tested in production. refer to Table 18 on page 58

for the value of VIT-max

Halt mode (or reset)

1.8

Table 29.

Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Min(1)

Guaranteed by characterization, not tested in production.

Typ

Max

Unit

VDD

Operating voltage

(all modes, execution/write/erase)

fCPU ≤24 MHz

3.0

5.5

tprog

Standard programming time

(including erase) for byte/word/block

(1 byte/4 bytes/128 bytes)

66.6

Fast programming time for 1 block

(128 bytes)

33.3

terase

Erase time for 1 block (128 bytes)

3.3

NRW

Program memory endurance

erase/write cycles(2)

The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a

write/erase operation addresses a single byte.

TA = 25 °C

1 k

cycles

TA = 125 °C

100

Data memory endurance erase/write

cycles(2)

TA = 25 °C

300 k

TA = 125 °C

100 k

TA = 145 °C

80 k

tRET

Program memory after cycling

TA = 25 °C

years

TA = 55 °C

TA = 85 °C

Data memory retention after cycling at

the endurance limits (T, n)

Full temperature

range

1000

hours

tRETI

Intrinsic data retention

TA = 25 °C

years

TA = 55 °C

TA = 85 °C

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