H7P1002DL datasheet(4/9 Pages) RENESAS

4 / 9 page

H7P1002DL, H7P1002DS

REJ03G1601-0100 Rev.1.00 Nov 16, 2007

Page 4 of 8

0.25

–50

100

150

Case Temperature

Tc (°C)

0.05

0.10

0.15

0.20

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

ID = –10 A

ID = –15 A

–2 A, –5 A

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

100

0.3

0.1

–0.1

–0.3

–1

–3

–30

–10

–100

Tc = –25°C

75°C

VDS = –10 V

Pulse Test

25°C

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

–0.1

–0.3

–1

–3

–10

–30

–100

1000

100

300

di / dt = 100 A /

µs

VGS = 0, Ta = 25°C

0–5

–15

–10

–20

–25

–30

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

10000

1000

3000

300

100

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

Gate Charge

Qg (nc)

–16

–12

–8

–4

–160

–120

–80

–40

Dynamic Input Characteristics

VDS

VGS

1000

300

100

–0.3

–1

–3

–30

–10

–100

–0.1

td(off)

td(on)

Drain Current

ID (A)

Switching Characteristics

VDD = –25 V

–50 V

–100 V

VDD = –100 V

–50 V

–25 V

–10 V

VGS = –4.5 V

–10 A

VGS = –10 V, VDD = –30 V

PW = 5

µs, duty ≤ 1 %

RG = 4.7 Ω

–2 A, –5 A

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