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H7P1002DL Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # H7P1002DL
Description  Silicon P Channel MOS FET High Speed Power Switching
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7P1002DL Datasheet(HTML) 1 Page - Renesas Technology Corp

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REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 1 of 8
H7P1002DL, H7P1002DS
Silicon P Channel MOS FET
High Speed Power Switching
REJ03G1601-0100
Rev.1.00
Nov 16, 2007
Features
• Low on-resistance
RDS(on) = 85 m
Ω typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
1
2
3
4
RENESAS Package code: PRSS0004ZD-B
H7P0601DS
H7P0601DL
(Package name: DPAK (L)-(2) )
1
2
3
4
D
G
S
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Rating
Unit
Drain to source voltage
VDSS
–100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–15
A
Drain peak current
ID (pulse)
Note1
–60
A
Body-drain diode reverse drain current
IDR
–15
A
Avalanche current
IAP
Note3
–12
A
Avalanche energy
EAR
Note3
14.4
mJ
Channel dissipation
Pch
Note2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω


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