H7P1002DL datasheet(2/9 Pages) RENESAS

2 / 9 page

H7P1002DL, H7P1002DS

REJ03G1601-0100 Rev.1.00 Nov 16, 2007

Page 2 of 8

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V(BR)DSS

–100

—

ID = –10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±20

—

IG =

±100 µA, VDS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±16 V, VDS = 0

Zero gate voltage drain current

IDSS

—

–10

µA

VDS = –100 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

–1.0

—

–2.5

ID = –1 mA, VDS = –10 V

Note4

—

105

Ω

ID = –7.5 A, VGS = –10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

105

150

Ω

ID = –7.5 A, VGS = –4.5 V

Note4

Forward transfer admittance

|yfs|

7.2

—

ID = –7.5 A, VDS = –10 V

Note4

Input capacitance

Ciss

—

2600

—

Output capacitance

Coss

—

190

—

Reverse transfer capacitance

Crss

—

120

—

VDS = –10 V

VGS = 0

f = 1 MHz

Total gate charge

—

Gate to source charge

Qgs

—

6.5

—

Gate to drain charge

Qgd

—

9.0

—

VDD = –50 V

VGS = –10 V

ID = –15 A

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

VGS = –10 V, ID = –7.5 A

RL = 4.0

Ω

Rg = 4.7

Ω

Body-drain diode forward voltage

VDF

—

–0.91

—

IF = –15 A, VGS = 0

Body-drain diode reverse recovery

time

trr

—

IF = –15 A, VGS = 0

diF/dt = 100 A/

µs

Note:

4. Pulse test

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