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STM32F101XC Datasheet(PDF) 59 Page - STMicroelectronics |
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STM32F101XC Datasheet(HTML) 59 Page - STMicroelectronics |
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59 / 106 page ![]() STM32F101xC, STM32F101xD, STM32F101xE Electrical characteristics Doc ID 14610 Rev 7 59/106 Table 33. Asynchronous multiplexed NOR/PSRAM read timings(1)(2) 1. CL = 15 pF. 2. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 7THCLK – 2 7THCLK + 2 ns tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 3THCLK – 0.5 3THCLK + 1.5 ns tw(NOE) FSMC_NOE low time 4THCLK – 1 4THCLK + 2 ns th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time –1 ns tv(A_NE) FSMC_NEx low to FSMC_A valid 0 ns tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 3 5 ns tw(NADV) FSMC_NADV low time THCLK –1.5 THCLK + 1.5 ns th(AD_NADV) FSMC_AD (address) valid hold time after FSMC_NADV high THCLK ns th(A_NOE) Address hold time after FSMC_NOE high THCLK ns th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 0 ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid 0 ns tsu(Data_NE) Data to FSMC_NEx high setup time 2THCLK + 24 ns tsu(Data_NOE) Data to FSMC_NOE high setup time 2THCLK + 25 ns th(Data_NE) Data hold time after FSMC_NEx high 0 ns th(Data_NOE) Data hold time after FSMC_NOE high 0 ns |
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