AT90SCR100 datasheet(383/433 Pages) ATMEL

383 / 433 page

383

TPR0327AY–SMS–30Jan09

AT90SCR100

address lines 15..8. Before issuing this command, make sure the instruction Load

Extended Address Byte has been used to define the MSB of the address. The

extended address byte is stored until the command is re-issued, i.e., the command

needs only be issued for the first page, and when crossing the 64KWord boundary. If

polling (RDY/BSY) is not used, the user must wait at least tWD_FLASH before issuing the

next page. (See Table 29-10.) Accessing the serial programming interface before the

Flash write operation completes can result in incorrect programming.

5. The EEPROM array is programmed one byte at a time by supplying the address and

data together with the appropriate Write instruction. An EEPROM memory location is

first automatically erased before new data is written. If polling is not used, the user must

wait at least tWD_EEPROM before issuing the next byte. (See Table 29-10.) In a chip

erased device, no 0xFFs in the data file(s) need to be programmed.

6. Any memory location can be verified by using the Read instruction which returns the

content at the selected address at serial output MISO. When reading the Flash mem-

ory, use the instruction Load Extended Address Byte to define the upper address byte,

which is not included in the Read Program Memory instruction. The extended address

byte is stored until the command is re-issued, i.e., the command needs only be issued

for the first page, and when crossing the 64KWord boundary.

7. At the end of the programming session, RESET can be set high to commence normal

operation.

8. Power-off sequence (if needed):

Set RESET to “1”.

Turn VCC power off.

29.7

Serial Programming Instruction set

Table 29-11 on page 383 and Figure 29-2 on page 385 describes the Instruction set.

Table 29-10.

Minimum Wait Delay Before Writing the Next Flash or EEPROM Location

Symbol

Minimum Wait Delay

tWD_FLASH

4.5 ms

tWD_EEPROM

9.0 ms

tWD_ERASE

9.0 ms

Table 29-11.

Serial Programming Instruction Set (Hexadecimal values)

Instruction/Operation

Instruction Format

Byte 1

Byte 2

Byte 3

Byte4

Programming Enable

$AC

$53

$00

Chip Erase (Program Memory/EEPROM)

$AC

$80

$00

Poll RDY/BSY

$F0

$00

data byte out

Load Instructions

Load Extended Address byte(1)

$4D

$00

Extended adr

$00

Load Program Memory Page, High byte

$48

$00

adr LSB

high data byte in

Load Program Memory Page, Low byte

$40

$00

adr LSB

low data byte in

Load EEPROM Memory Page (page access)

$C1

$00

0000 000aa(2)

data byte in

Read Instructions

Read Program Memory, High byte

$28

adr MSB

adr LSB

high data byte out

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