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VG37648041AT Datasheet(PDF) 41 Page - Vanguard International Semiconductor |
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VG37648041AT Datasheet(HTML) 41 Page - Vanguard International Semiconductor |
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41 / 86 page ![]() Document : 1G5-0157 Rev.1 Page 41 VIS Preliminary VG37648041AT 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM Dl b=Data In for column b 3 subsequent elements of Data In are applied in the programmed order following Dl b A non-interrupted burst of 4 is shown A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled) DON’T CARE UNDEFINED CLK# CLK COMMAND ADDRESS WRITE NOP NOP Col b Bank a, Figure 16 WRITE BURST - MIN DSS DQS T0 T1 T2 T3 T4 T5 T6 DM DQ Dl b tDSS min NOP |
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