HAL710 datasheet(11/19 Pages) MICRONAS

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DATA SHEET

HAL 710, HAL 730

Micronas

Oct. 13, 2009; DSH000031_002EN

3.6. Characteristics

at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24V, GND = 0 V

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Fig. 3–2: Recommended pad size SOT89B-2

Dimensions in mm

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Test Conditions

IDD

Supply Current

5.5

TJ = 25 °C

IDD

Supply Current

over Temperature Range

2710

VDDZ

Overvoltage Protection

at Supply

−

28.5

IDD = 25 mA, TJ = 25 °C, t = 2 ms

VOZ

Overvoltage Protection

at Output

2,3

−

IOL = 20 mA, TJ = 25 °C, t = 15 ms

VOL

Output Voltage

2,3

−

130

280

IOL = 10 mA, TJ = 25 °C

VOL

Output Voltage over

Temperature Range

2,3

−

130

400

IOL = 10 mA,

IOH

Output Leakage Current

2,3

−

0.06

0.1

μA

Output switched off, TJ = 25 °C,

VOH = 3.8 V to 24 V

IOH

Output Leakage Current over

Temperature Range

2,3

−−

μA

Output switched off, TJ ≤ 140 °C,

VOH = 3.8 V to 24 V

fosc

Internal Sampling Frequency

over Temperature Range

−

100

150

−

kHz

ten(O)

Enable Time of Output after

Setting of VDD

−

−μsV

DD = 12 V,

B>Bon + 2 mT or B<Boff − 2mT

Output Rise Time

2,3

−

0.2

−μsV

DD = 12 V, RL = 2.4 kΩ, CL =

20 pF

Output FallTime

2,3

−

0.2

−μsV

DD = 12 V, RL = 2.4 kΩ, CL =

20 pF

RthSB

case

SOT89B-2

Thermal Resistance Junction to

Substrate Backside

−−

150

200

K/W

Fiberglass Substrate

30 mm x 10 mm x 1.5 mm,

pad size

1.05

1.80

0.50

1.50

1.45

2.90

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