PBLS1502Y datasheet(4/14 Pages) NXP

4 / 14 page

PBLS1502Y_PBLS1502V_3

Product data sheet

Rev. 03 — 24 August 2009

4 of 14

NXP Semiconductors

PBLS1502Y; PBLS1502V

15 V PNP BISS loadswitch

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02

Table 8.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Transistor TR1: PNP

ICBO

collector-base cut-off

current

VCB =−15 V; IE = 0 A

−100

VCB =−15 V; IE = 0 A; Tj = 150 °C-

−50

µA

ICES

collector-emitter

cut-off current

VCE =−15 V; VBE = 0 V

−100

IEBO

emitter-base cut-off

current

VEB =−5 V; IC = 0 A

−100

hFE

DC current gain

VCE =−2 V; IC =−10 mA

200

VCE =−2 V; IC =−100 mA

[1] 150

VCE =−2 V; IC =−500 mA

[1] 90

VCEsat

collector-emitter

saturation voltage

IC =−10 mA; IB =−0.5 mA

−25

IC =−200 mA; IB =−10 mA

−150

IC =−500 mA; IB =−50 mA

[1] --

−250

RCEsat

equivalent

on-resistance

IC =−500 mA; IB =−50 mA

[1] -

300

500

Ω

VBEsat

base-emitter

saturation voltage

IC =−500 mA; IB =−50 mA

[1] --

−1.1

VBEon

base-emitter

turn-on voltage

VCE =−2 V; IC =−100 mA

[1] --

−0.9

transition frequency

VCE = −5 V; IC =−100 mA;

= 100 MHz

100

280

MHz

collector capacitance

VCB =−10 V; IE = ie = 0 A;

= 1 MHz

--10

Transistor TR2: NPN

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE = 30 V; IB = 0 A

µA

VCE = 30 V; IB = 0 A; Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A

900

µA

hFE

DC current gain

VCE = 5 V; IC = 10 mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA

1.1

0.5

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 20 mA

2.5

1.9

bias resistor 1 (input)

3.3

4.7

6.1

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB = 10 V; IE = ie = 0 A; f = 1 MHz

2.5

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