PBLS1502Y datasheet(5/14 Pages) NXP

5 / 14 page

PBLS1502Y_PBLS1502V_3

Product data sheet

Rev. 03 — 24 August 2009

5 of 14

NXP Semiconductors

PBLS1502Y; PBLS1502V

15 V PNP BISS loadswitch

VCE =−2 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb =−55 °C

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb =−55 °C

Fig 1.

TR1(PNP): DC current gain as a function of

collector current; typical values

Fig 2.

TR1(PNP): Collector-emitter saturation voltage

as a function of collector current; typical

values

VCE =−2 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb =−55 °C

Fig 3.

TR1(PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 4.

TR1(PNP): Base-emitter saturation voltage as

a function of collector current; typical values

001aaa181

IC (mA)

−10−1

−103

−102

−1

−10

200

400

600

hFE

(1)

(2)

(3)

001aaa185

−102

−10

−103

VCEsat

(mV)

−1

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

001aaa183

−500

−700

−300

−900

−1100

VBE

(mV)

−100

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(3)

(2)

001aaa184

−600

−800

−400

−1000

−1200

VBEsat

(mV)

−200

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

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