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PBLS1502Y Datasheet(PDF) 8 Page - NXP Semiconductors |
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PBLS1502Y Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 14 page ![]() PBLS1502Y_PBLS1502V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 24 August 2009 8 of 14 NXP Semiconductors PBLS1502Y; PBLS1502V 15 V PNP BISS loadswitch VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb =−40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb =−40 °C Fig 9. TR2(NPN): DC current gain as a function of collector current; typical values Fig 10. TR2(NPN): Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb =−40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = 5 V (1) Tamb =−40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 11. TR2(NPN): On-state input voltage as a function of collector current; typical values Fig 12. TR2(NPN): Off-state input voltage as a function of collector current; typical values IC (mA) 10−1 102 10 1 001aaa188 102 10 103 hFE 1 (2) (3) (1) IC (mA) 1102 10 001aaa187 10−1 1 VCEsat (V) 10−2 (1) (2) (3) IC (mA) 10−1 102 10 1 001aaa189 10 1 102 VI(on) (V) 10−1 (1) (2) (3) 001aaa190 IC (mA) 10−2 10 1 10−1 1 10 VI(off) (V) 10−1 (1) (3) (2) |
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