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KM44C4103C Datasheet(PDF) 6 Page - Samsung semiconductor

Part # KM44C4103C
Description  4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
PDF  20 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM44C4103C Datasheet(HTML) 6 Page - Samsung semiconductor

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CMOS DRAM
KM44C4003C, KM44C4103C
AC CHARACTERISTICS (Continued)
Parameter
Symbol
-5
-6
Units
Notes
Min
Max
Min
Max
Data set-up time
tDS
0
0
ns
9
Data hold time
tDH
10
10
ns
9
Refresh period (2K, Normal)
tREF
32
32
ms
Refresh period (4K, Normal)
tREF
64
64
ms
Refresh period (L-ver)
tREF
128
128
ms
Write command set-up time
tWCS
0
0
ns
7,16
CAS to W delay time
tCWD
36
40
ns
7,14
RAS to W delay time
tRWD
73
85
ns
7
Column address to W delay time
tAWD
48
55
ns
7
CAS precharge to W delay time
tCPWD
53
60
ns
7
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
ns
16
CAS hold time (CAS -before-RAS refresh)
tCHR
10
10
ns
15
RAS to CAS precharge time
tRPC
5
5
ns
16
Access time from CAS precharge
tCPA
30
35
ns
3,15
Fast Page mode cycle time
tPC
35
40
ns
19
Fast Page read-modify-write cycle time
tPRWC
76
85
ns
19
CAS precharge time (Fast Page cycle)
tCP
10
10
ns
20
RAS pulse width (Fast Page cycle)
tRASP
50
200K
60
200K
ns
RAS hold time from CAS precharge
tRHCP
30
35
ns
OE access time
tOEA
13
15
ns
21
OE to data delay
tOED
13
15
ns
22
Output buffer turn off delay time from OE
tOEZ
0
13
0
15
ns
6
OE command hold time
tOEH
13
15
ns
Write command set-up time (Test mode in)
tWTS
10
10
ns
11
Write command hold time (Test mode in)
tWTH
10
10
ns
11
W to RAS precharge time(C-B-R refresh)
tWRP
10
10
ns
W to RAS hold time(C-B-R refresh)
tWRH
10
10
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
us
25,26,27
RAS precharge time (C-B-R self refresh)
tRPS
90
110
ns
25,26,27
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
ns
25,26,27
Hold time CAS low to CAS high
tCLCH
5
5
ns
13,24



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