PD57018STR-E datasheet(7/25 Pages) STMICROELECTRONICS

Part #	PD57018STR-E

Description	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PDF	25 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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7 / 25 page

PD57018-E, PD57018S-E

Typical performance

Doc ID 12214 Rev 4

7/25

Figure 9.

Drain efficiency vs

output power

Figure 10.

Return loss vs output power

Pout, OUTPUT POWER (W)

945 MHz

960 MHz

925 MHz

Vdd = 28 V

Idq = 100 mA

0246

Pout, OUTPUT POWER (W)

-35

-30

-25

-20

-15

-10

-5

960 MHz

945 MHz

925 MHz

Vdd =28 V

Idq = 100 mA

Figure 11.

Output power vs

bias current

Figure 12.

Efficiency vs bias current

Figure 13.

Output power vs

drain voltage

Figure 14.

Output power vs

gate voltage

100

150

200

250

300

350

400

Idq, BIAS CURRENT (mA)

960 MHz

925 MHz

945 MHz

Pin = .45 W

Vdd =28 V

100

150

200

250

300

350

400

Idq, BIAS CURRENT (mA)

925 MHz

945 MHz

960 MHz

Pin = .45 W

Vdd =28 V

VDS, DRAIN-SOURCE VOLTAGE (V)

960 MHz

925 MHz

945 MHz

Pin = .45 W

Idq = 100 mA

00.5

1.522.5

33.5

VGS, GATE BIAS VOLTAGE (V)

945 MHz

960 MHz

925 MHz

VDD = 28 V

Pin = .45 W

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