BSC032NE2LS datasheet(3/12 Pages) INFINEON

3 / 12 page

OptiMOS™ Power-MOSFET

BSC032NE2LS

Final Data Sheet

2.0, 2011-03-01

Maximum ratings

j = 25 °C, unless otherwise specified.

Thermal characteristics

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current

GS=10 V, TC=25 °C

GS=10 V, TC=100 °C

GS=4.5 V, TC=25 °C

GS=4.5 V, TC=100 °C

GS=10 V, TA=25 °C,

thJA=50 K/W

1))

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.

Pulsed drain current

See figure 3 for more detailed information

D,pulse

336

C=25 °C

Avalanche current, single pulse

3) See figure 13 for more detailed information

Avalanche energy, single pulse

D=20 A,RGS=25 Ω

Gate source voltage

-20

Power dissipation

tot

C=25 °C

2.5

A=25 °C, RthJA=50 K/W

1))

Operating and storage temperature

j,Tstg

-55

150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

Table 3

Thermal characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Thermal resistance, junction - case

thJC

3.4

K/W

top

Device on PCB

thJA

6 cm

2 cooling area1)

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air

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