BSC032NE2LS datasheet(5/12 Pages) INFINEON

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OptiMOS™ Power-MOSFET

BSC032NE2LS

Electrical characteristics

Final Data Sheet

2.0, 2011-03-01

Table 6

Gate charge characteristics

1) See figure 16 for gate charge parameter definition

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Gate to source charge

-3.1

DD=12 V,

D=30 A,

GS=0 to 4.5 V

Gate charge at threshold

g(th)

-1.9

Gate to drain charge

-1.9

Switching charge

-3.1

Gate charge total

-7.7

Gate plateau voltage

plateau

-2.7

Gate charge total

-16

DD=12 V,

D=30 A,

GS=0 to 10V

Gate charge total, sync. FET

g(sync)

-6.7

DS=0.1 V,

GS=0 to 4.5 V

Output charge

oss

-9.4

DD=12 V, VGS=0 V

Table 7

Reverse diode characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode continuous forward current

C=25 °C

Diode pulse current

S,pulse

148

Diode forward voltage

-0.87

GS=0 V, IF=30 A,

j=25 °C

Reverse recovery charge

-10

R=15 V, IF=Is,

F/dt=400 A/µs

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