BSC032NE2LS datasheet(4/12 Pages) INFINEON

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OptiMOS™ Power-MOSFET

BSC032NE2LS

Electrical characteristics

Final Data Sheet

2.0, 2011-03-01

Electrical characteristics

Electrical characteristics, at

Tj=25 °C, unless otherwise specified.

Table 4

Static characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Drain-source breakdown voltage

(BR)DSS

GS=0 V, ID=1mA

Gate threshold voltage

GS(th)

2.2

DS=VGS, ID=250 µA

Zero gate voltage drain current

DSS

-0.1

µA

DS=25 V, VGS=0 V,

j=25 °C

100

DS=25 V, VGS=0 V,

j=125 °C

Gate-source leakage current

GSS

100

GS=20V, VDS=0 V

Drain-source on-state resistance

DS(on)

-3.8

4.8

GS=4.5 V, ID=30A,

-2.7

3.2

GS=10 V, ID=30 A,

Gate resistance

-0.9

Transconductance

DS|>2|ID|RDS(on)max,

D=30 A

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Input capacitance

iss

-1200

GS=0 V, VDS=12 V,

f=1 MHz

Output capacitance

oss

-470

Reverse transfer capacitance

rss

-51

Turn-on delay time

d(on)

-3.3

DD=12 V, VGS=10V,

D=30 A, RG=1.6 Ω

Rise time

-2.8

Turn-off delay time

d(off)

-15

Fall time

-2.2

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